SiC颗粒表面化学镀铜的研究  

Study on the Eletcroless Copper Plating on SiC Particle

作　　者：黄晓莹[1] 李玉海[1] 童昕[1] 程世楠[1] 

机构地区：[1]沈阳理工大学材料科学与工程学院,辽宁沈阳110168

出　　处：《表面技术》2008年第6期41-43,共3页Surface Technology

摘　　要：为了改善SiC/Al之间的润湿性,采用化学镀法对40μm的SiC颗粒进行了化学镀铜,并研究了影响化学镀铜镀速的因素。采用扫描电镜(SEM)观察镀覆层形貌,确定了镀覆效果最好时影响化学镀铜各因素的取值,分析了搅拌和EDTA溶解状况对镀覆效果的影响。结果表明:随着温度升高,装载量、甲醛和NaOH浓度增加时,镀速先升高后降低。当镀速最大时,镀覆效果也最好。随着硫酸铜含量的升高,镀速也不断提高,镀液中硫酸铜7g/L、EDTA14g/L、稳定剂30mg/L时镀覆效果最好。搅拌能够提高镀速,得到好的镀覆效果;EDTA未完全溶解时会降低镀速,影响镀覆效果。In order to improve the wettability between SiC and Al, plating copper on 40μm SiC particles was made by electroless copper plating. And factors affecting deposition rate of electroless plating copper were investigated. SEM was employed to observe surface topography, and the value of the factors were determined when plating effect was best. The effects of stirring and the state of dissolved EDTA on plating results were analyzed. The result shows that deposition rate increases with the increasing of temperature, load capacity, formaldehyde and NaOH, and then decreases with further increasing of them. When the deposition rate is the fastest, the plating result is the best too. More CuSO4 leads to higher deposition rate, When CuSO4 is 7g/L, EDTA is 14g/L, stabilizer is 30mg/L, plating result is the best. Stirring can increase deposition rate, get better plating results; Not completely dissolved EDTA will reduce deposition rate and make bad effect on plating results.

关 键 词：化学镀铜 镀速 SIC颗粒 

分 类 号：TG153.1[金属学及工艺—热处理]