化学机械抛光工艺中的抛光垫  

Study on the Pad in Chemical Mechanical Polishing Process

作　　者：周海[1] 王黛萍[1] 王兵[1] 陈西府[1] 冶远祥 

机构地区：[1]盐城工学院,江苏盐城224051 [2]兴化祥盛光电子材料公司,江苏兴化225761

出　　处：《机械工程与自动化》2008年第6期73-75,共3页Mechanical Engineering & Automation

基　　金：江苏省科技厅科技攻关项目(BE2007077);江苏省自然科学基础研究项目(BK2008197);江苏省高校自然科学基础研究项目(06KJB460119);江苏省大学生实践创新训练计划项目(07SSJCX026)

摘　　要：抛光垫是晶片化学机械抛光中决定表面质量的重要辅料。研究了抛光垫对光电子晶体材料抛光质量的影响:硬的抛光垫可提高晶片的平面度;软的抛光垫可改善晶片的表面粗糙度;表面开槽和表面粗糙的抛光垫可提高抛光效率;对抛光垫进行适当的修整可使抛光垫表面粗糙。Polishing pad is an important component of the chemical mechanical polishing （CMP） system. Based on the analysis on the material and surface structure of CMP pad,effect has been studied about the polishing pads used to polish the photo-electronic crystal materials. The hard polishing pad can improve the substrate flatness,the soft polishing pad can improve the substrate surface roughness ,the grooved pad and the rough pad can improve the efficiency of polishing. Suitable conditioning can improve the surface roughness of polishing pad.

关 键 词：化学机械抛光 抛光垫 表面粗糙度 

分 类 号：TG580.692[金属学及工艺—金属切削加工及机床]