双轴织构氧化铈薄膜的反射高能电子衍射分析  

REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION ANALYSIS OF BIAXIALLY TEXTURED CERIUM OXIDE FILMS

作　　者：魏贤华[1,2] 熊杰[2] 接文静[2] 

机构地区：[1]西南科技大学材料科学与工程学院,四川绵阳621010 [2]电子科技大学,电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《硅酸盐学报》2008年第12期1749-1752,共4页Journal of The Chinese Ceramic Society

摘　　要：为了制备高温超导带材,采用直流反应磁控溅射在Ni-5%(摩尔分数)W衬底上制备双轴织构的CeO2薄膜用作缓冲层。通过反射高能电子衍射仪观察分析了双轴织构CeO2的衍射谱。选取某一衍射点,提取其衍射强度相对直入点的弧度分布,拟合半高宽得到其面外取向分布;旋转样品,对某一非对称晶面的衍射强度做摇摆分析,得到其面内取向分布,其结果均与X射线衍射分析结果较为吻合。在CeO2缓冲层上制备的YBa2Cu3O7薄膜的临界温度为88 K,临界电流密度为1.2 MA/cm2(77 K)。Biaxially textured CeO2 films were fabricated as a buffer for the growth of high-temperature superconductor coated conductors on Ni-5%（mole fraction）W substrates by a reactive direct-current sputtering method. Using reflection high-energy electron diffraction, the diffraction patterns from the biaxially textured CeO2 were observed. The full-width at half maximum of the out-of-plane orientation was fitted from the ring profile of the diffraction intensity of a selected diffraction spot relative to the through spot, and the in-plane orientation was determined by evaluating changes in the intensity of asymmetric diffraction spots while rotating the sample around the substrate normal. The analysis results are in agreement with the data obtained using X-ray diffraction. The YBa2Cu3O7 filmS grown on the CeO2 buffer layers exhibit a critical temperature of about 88 K, and a critical current of about 1.2 MA/cm2 at 77 K.

关 键 词：超导带材 缓冲层 织构 反射高能电子衍射 

分 类 号：TG115.23[金属学及工艺—物理冶金]