定向凝固多晶硅的结晶组织及晶体缺陷与杂质研究  

Development of Studies of Crystallization Structures,Crystal Defects and Impurities in Multicrystalline Silicon by Unidirectional Solidification

作　　者：钟根香[1] 周浪[1] 周潘兵[1] 万跃鹏[2] 

机构地区：[1]南昌大学LDK太阳能研究中心,南昌330031 [2]江西赛维LDK太阳能高科技有限公司,新余338032

出　　处：《材料导报》2008年第12期14-18,31,共6页Materials Reports

摘　　要：多晶硅是目前最主要的光伏材料,其结晶组织、缺陷和杂质含量显著影响太阳能电池的转换效率。通过控制硅锭定向凝固过程获得取向一致、粗大均一的结晶组织和采用各种吸杂及钝化方法降低杂质及缺陷对电学性能的影响是目前提高多晶硅太阳能电池转换效率的重要途径。介绍和评述了国内外包括本研究组对多晶硅的结晶组织及控制、晶体缺陷、杂质水平与分布及其与硅片性能关系的研究进展,并对当前的各种吸杂与钝化方法及其效果进行了总结。Multicrystalline silicon has become the dominant material for solar cells. Properties of the solar cells strongly depend on crystallization structures, defect structures and impurity levels of the multicrystalline silicon ingots. Controlling the unidirectional solidification process and using passivation and impurity gettering treatments are the main approaches to improve the solar cell properties. In the present paper, the development in studies of the each concerned aspect, their control, and their effects on the photovoltaic properties of the solar cells, including work conducted by our present group, is reviewed. In addition,the passivation and impurity gettering techniques for improving photovoltaic performance are discussed.

关 键 词：多晶硅 结晶 晶体缺陷 杂质 

分 类 号：TG292[金属学及工艺—铸造] T-1[一般工业技术]