激光退火能量对非晶Si薄膜晶化的影响  

Influence of Annealed Laser Energy on Crystallization of Amorphous Si Thin Films

作　　者：邓泽超[1] 马娜[2] 褚立志[1] 王英龙[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002 [2]河北大学图书馆,河北保定071002

出　　处：《河北大学学报（自然科学版）》2008年第6期592-595,共4页Journal of Hebei University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(10774036);河北省自然科学基金资助项目(E2005000129);河北省教育厅基金资助项目(Z2007222)

摘　　要：采用XeCl准分子脉冲激光,在真空环境中烧蚀单晶Si靶,在Si(111)和石英衬底上沉积生成非晶Si薄膜.在同样的环境下,用激光对非晶Si薄膜进行退火,通过扫描电子显微镜和拉曼光谱仪对退火后的样品进行分析比较.结果表明,激光能量对非晶薄膜的晶化和纳米晶粒尺寸有重要影响.In the vacuum situation, the Si target was ablated by XeCl pulsed laser, the amorphous Si thin films were deposited on the substrates of Si （111） and quartz. Under the same ambient, the as-deposited films were annealed by pulsed laser, then analyzed the as-annealed samples by scanning electron microscope and Raman scattering measurements. The results indicate that the energy of the annealed laser have important effect on the crystallization of the films and the size of nanoparticles.

关 键 词：激光退火 脉冲激光烧蚀 纳米晶粒 晶化 

分 类 号：O78[理学—晶体学]