冶金法制备太阳能级硅的原理及研究进展  

Principle and Research Progress on Preparation Solar Grade (SoG) Silicon by Metallurgical Route

作　　者：罗大伟[1] 张国梁[1] 张剑[1] 李军[1] 李廷举[1,2] 

机构地区：[1]大连理工大学材料科学与工程学院,辽宁大连116024 [2]大连理工大学三束材料改性国家重点实验室,辽宁大连116024

出　　处：《铸造技术》2008年第12期1721-1726,共6页Foundry Technology

基　　金：国家自然科学基金重点项目(50474055)

摘　　要：随着光伏市场需求不断增加,满足光伏电池技术经济指标要求的硅材料出现严重短缺,低成本提纯冶金硅至太阳能级硅工艺技术越来越受到广泛重视,成为研究开发热点。本文分析了全球光伏产业的发展现状和趋势,对目前获得太阳能级多晶硅的化学路径和冶金路径进行了对比分析;重点介绍了冶金法制备太阳能级硅的工艺原理,以及目前常用的提纯技术;同时,简单介绍低成本生产太阳能级多晶硅的新工艺,并指出了冶金法可能是今后提纯多晶硅的主要研究方向。With ever-increasing need in photovoltaic industry, the shortage of silicon feedstock which can meet technical and economic specifications of the photovoltaic cells is severe. More and more attentions have been paid to the research of producing solar grade silicon by refining metallurgical grade silicon. The development status and trend of the world photovoltaic industry are reviewed and the process for obtaining polycrystalline solar-grade silicon by chemical and metallurgical routes are contrastively analyzd. The technology principles of solar grade silicon prepared by metallurgical routes along with conventional purification techniques are emphatically introduced. Meanwhile, the low cost technology for manufacturing solar grade multicrystal silicon is introduced and it is pointed out that the metallurgical method maybe the future research direction for purifying multicrystal silicon.

关 键 词：太阳能级硅 硅提纯 生产工艺 研究进展 

分 类 号：TM914.4[电气工程—电力电子与电力传动]