环境半导体Ca_2Si薄膜制备及椭偏光谱研究  

Study on Fabrication and Spectroscopic Ellipsometry of Ca_2Si Thin Films

作　　者：肖清泉[1] 谢泉[1] 杨吟野[1] 余志强[1] 赵珂杰[1] 

机构地区：[1]贵州大学电子科学与信息技术学院,贵阳550025

出　　处：《湖南工程学院学报（自然科学版）》2008年第4期37-39,共3页Journal of Hunan Institute of Engineering(Natural Science Edition)

基　　金：国家自然科学基金资助项目(60676002)

摘　　要：采用磁控溅射系统成功地制备出了环境半导体Ca2Si薄膜,并对制备出的Ca2Si薄膜进行了椭偏光谱测量研究,得到了不同退火温度下Ca2Si薄膜的光学常数谱.结果表明,Ca2Si薄膜的折射率在4.3 eV附近取得极小值,其消光系数在3.3 eV附近取得极大值.Ecologically friendly semiconducting Ca2Si thin films are fabricated by magnetron sputtering. Their ellipsometric spectra are obtained by spectroscopic ellipsometry, and the optical constants of Ca2Si thin films at different annealing temperatures are found. Results show that the refractive indexes of Ca2 Si thin films reach their minimum at-4. 3eV, and the extinction coefficients reach their maximum at-3.3eV.

关 键 词：环境半导体 Ca2Si薄膜 磁控溅射 椭偏光谱 

分 类 号：TP211.5[自动化与计算机技术—检测技术与自动化装置]