基于双绝缘层低电压n-型OFET的研制  

Low voltage n-type OFET based on double insulators

作　　者：周建林[1] 张福甲[1] 

机构地区：[1]兰州大学物理科学与技术学院,甘肃兰州730000

出　　处：《光电子．激光》2008年第12期1602-1605,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(60676033)

摘　　要：采用顶接触结构研制了以Ta2O5/PMMA为绝缘层,有机材料PTCDI-C12为有源层的低电压n型有机场效应晶体管。其中Ta2O5薄膜采用阳极氧化方法制备,PMMA薄膜通过溶液旋涂法制备。与基于单一Ta2O5绝缘层的器件相比,双绝缘层器件的电学性能大幅提高。经测试得到器件场效应电子迁移率为0.063 cm2/Vs,开关电流比为1.7×104,阈值电压为2.3 V。A kind of top contact n-type organic field-effect transistor with low operating voltage was fabricated by employing Ta2O5/PMMA as the double insulator and PTCDI-Cl2 as the semiconductor active layer. The Ta2O5 layer was prepared by using simple economical anodization technique and the PMMA layer was prepared by using spin-coating method. Compared to the OFET with single Ta2O5 insulator,the device with double insulators shows obviously better electrical performance. It has the filed-effect electron mobility of 0. 063 cm^2/Vs,on/off current ratio of 1.7 × 10^4 and the threshold voltage of 2.3 V.

关 键 词：有机场效应晶体管(OFET) 双绝缘层 PTCDI-Cl2 N型 

分 类 号：TN386[电子电信—物理电子学]