Passively Mode-Locked Quasi-Three-Level Nd：LuVO4 Laser with Semiconductor Saturable Absorber Mirror  

作　　者：何坤娜 魏志义 许长文 李德华 张治国 张怀金 王继扬 高春清 

机构地区：[1]Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100190 [2]National Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100 [3]Department of Opto-Electronics, Beijing Institute of Technology, Beijing 100081

出　　处：《Chinese Physics Letters》2008年第12期4286-4287,共2页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 60490280, 60621063, 50572054 and 50590401, and the National Basic Research Programme of China under Grant Nos 2007CB815104 and 2004CB619002.

摘　　要：We demonstrate a passively a Z-folded resonator. Using device, we achieve stable cw average output power under cw mode-locked Nd：LuVO4 laser operating on the quasi-three-level at 916nm with a semiconductor saturable absorber mirror （SESAM） as the passive mode-locking mode locking with 6.7ps pulse duration at repetition rate of 133 MHz and 88mW the pump power of 17.1 W.We demonstrate a passively a Z-folded resonator. Using device, we achieve stable cw average output power under cw mode-locked Nd：LuVO4 laser operating on the quasi-three-level at 916nm with a semiconductor saturable absorber mirror （SESAM） as the passive mode-locking mode locking with 6.7ps pulse duration at repetition rate of 133 MHz and 88mW the pump power of 17.1 W.

关 键 词：field emission molybdenum dioxide enhancement factor 

分 类 号：O47[理学—半导体物理]