铝基板表面氧化铝层分子自组装活化法镀铜  

Technology of electroless copper plating on alumina of aluminum substrate surface

作　　者：陈智栋[1] 于清路[1] 王文昌[1] 么士平[2,3] 许娟[1] 

机构地区：[1]江苏工业学院化学化工学院,江苏常州213016 [2]中国科学院生态环境研究中心,北京100085 [3]中国化工集团公司,北京100088

出　　处：《电子元件与材料》2008年第12期36-39,共4页Electronic Components And Materials

摘　　要：采用分子自组装活化法在铝基板表面氧化铝上实施化学镀铜,镀层有很好的剥离强度,通过SEM、EDS和离子色谱对其进行了表征。研究了硅烷化时间与基体表面硅烷修饰量的关系,浸钯时间对基体表面钯含量的影响,硅烷化时间对镀层剥离强度的影响。通过正交试验得到最佳工艺条件:硅烷化处理用3-氨基丙基三乙氧基硅烷,质量分数为0.4%,硅烷化时间12h、温度50℃、浸钯溶液活化时间30min、30℃;得到的镀铜层剥离强度为1.00。The electroless copper plating coatings was practiced on alumina of Al substrate surface by molecular self-assembly active method. The coatings had excellent ablation strength and were characterized by SEM, EDS and ion chromatography. The relationship between silanization time and the modified quantity of APTS on substrate surface, the effect of Pd solution dip time on the quantity of Pd on the substrate surface and the effect of silanization time on the ablation strength of copper coating were studied. The best technological conditions obtained by the orthogonal test are as follows： the silanization time is 12 h, at 50 ℃ with w[（3-aminopropyl） triethoxysilan （APTS）] of 0.4%, Pd solution dip time and temperature of activation are 30 min and 30 ℃, respectively; gaining copper coating ablation strength is 1.00.

关 键 词：分子自组装活化法 硅烷化 氧化铝 化学镀铜 

分 类 号：TN704[电子电信—电路与系统]