Research on reverse recovery characteristics of SiGeC p-i-n diodes  

作　　者：高勇 刘静 杨媛 

机构地区：[1]Department of Electronic Engineering, Xi'an University of Technology

出　　处：《Chinese Physics B》2008年第12期4635-4639,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No 50477012);the Foundation of Excellent Doctoral Dissertation of Xi’an University of Technology and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No 20050700006)

摘　　要：This paper analyses the reverse recovery characteristics and mechanism of SiGeC p-i-n diodes. Based on the integrated systems engineering （ISE） data, the critical physical models of SiGeC diodes are proposed. Based on heterojunction band gap engineering, the softness factor increases over six times, reverse recovery time is over 30% short and there is a 20% decrease in peak reverse recovery current for SiGeC diodes with 20% of germanium and 0.5% of carbon, compared to Si diodes. Those advantages of SiGeC p-i-n diodes are more obvious at high temperature. Compared to lifetime control, SiCeC technique is more suitable for improving diode properties and the tradeoff between reverse recovery time and forward voltage drop can be easily achieved in SiGeC diodes. Furthermore, the high thermal-stability of SiGeC diodes reduces the costs of further process steps and offers more freedoms to device design.This paper analyses the reverse recovery characteristics and mechanism of SiGeC p-i-n diodes. Based on the integrated systems engineering （ISE） data, the critical physical models of SiGeC diodes are proposed. Based on heterojunction band gap engineering, the softness factor increases over six times, reverse recovery time is over 30% short and there is a 20% decrease in peak reverse recovery current for SiGeC diodes with 20% of germanium and 0.5% of carbon, compared to Si diodes. Those advantages of SiGeC p-i-n diodes are more obvious at high temperature. Compared to lifetime control, SiCeC technique is more suitable for improving diode properties and the tradeoff between reverse recovery time and forward voltage drop can be easily achieved in SiGeC diodes. Furthermore, the high thermal-stability of SiGeC diodes reduces the costs of further process steps and offers more freedoms to device design.

关 键 词：SIGEC softness factor THERMAL-STABILITY lifetime control 

分 类 号：TN312.4[电子电信—物理电子学]