高阶曲率补偿电流模式的CMOS带隙基准源  

High-Order Curvature-Compensated CMOS Bandgap Reference of Current Mode

作　　者：李斌桥[1] 许延华[1] 徐江涛[1] 姚素英[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《天津大学学报》2008年第12期1459-1464,共6页Journal of Tianjin University(Science and Technology)

基　　金：国家自然科学基金资助项目(60576025)

摘　　要：为获得一个稳定而精确的基准电压，提出了一种适用于低电源电压下高阶曲率补偿的电流模式带隙基准源电路,通过在传统带隙基准源结构上增加一个电流支路，实现了高阶曲率补偿。该电路采用Chartered 0.35μm CMOS工艺，经过Spectre仿真验证，输出电压为800mV，在-40～85℃温度范围内温度系数达到3×10^-6℃^-1，电源抑制比在10kHz频率时可达-60dB，在较低电源电压为1．7V时电路可以正常启动，补偿改进后的电路性能较传统结构有很大提高．A high-order curvature-compensated CMOS bandgap reference of current mode, applicable to low supply voltage, is proposed to obtain stable and accurate reference voltage. The circuit realizes high-order curvature compensation by adding a new branch to the traditional bandgap reference. It was fabricated in Chartered 0.35 μm CMOS process. By simulation and verification with spectre, the circuit achieves an output voltage of 800 mV, a temperature coefficient of 3 × 10^-6℃ in the temperature range of-40℃ to 85 ℃, a PSRR of -60 dB at 10 kHz and functions performed properly with a minimum supply voltage of 1.7 V. The proposed circuit outperforms the traditional one largely.

关 键 词：CMOS带隙基准源 高阶曲率补偿 电流模式 低电源电压 

分 类 号：TN492[电子电信—微电子学与固体电子学]