CuCl^+注入α-Al_2O_3晶体退火后表面亚微米颗粒的形成情况研究  

Formation of Sub-μm Particles in the CuCl^+ Implanted α-Al_2O_3 Crystal after Annealing

作　　者：王春芬[1] 黄宁康[2] 张海峰[1] 张永辉[1] 

机构地区：[1]中国船舶重工集团公司第七二五研究所,河南洛阳471039 [2]四川大学原子核科学技术研究所教育部辐射物理及技术重点实验室,四川成都610064

出　　处：《材料开发与应用》2008年第6期4-6,共3页Development and Application of Materials

基　　金：国家自然科学基金资助项目(10176106)

摘　　要：CuC l+离子注入不同晶向的α-A l2O3晶体中,对在还原气氛下退火后的试样进行SEM表面观察。结果发现,不同注入条件和不同温度退火的不同晶向α-A l2O3晶体表面均形成弥散的亚微米颗粒。说明CuC l+离子注入α-A l2O3晶体产生的缺陷损伤在退火过程中,单个分散的带电色心缺陷与CuC l+离子形成的缺陷缔合体在恢复过程中发生了CuC l原子的偏聚,随着退火时间的增加,偏聚程度提高而形成颗粒,并逐渐长大形成亚微米颗粒。颗粒的大小和分布随注入条件以及退火温度不同而不同。α-Al2O3 with different orientations were implanted with CuCl^＋ ions, then annealed in reducing atmosphere at different temperature. These samples were analyzed under SEM. It is found that sub-μm particles appeared on the surface of the sampies. The defects produced by ion implantation segregate during annealing process, where single color centre combining with CuCl^＋ ion forms defect complex leading to the segregation of CuCl^＋ ions. With prolongation of annealing time, the degree of segregation becomes high resulting in the formation of sub - μm particles. The size and distribution of these particles depends on ion implantation conditions and annealing temperature.

关 键 词：离子注入 退火 偏聚 亚微米颗粒 

分 类 号：TG174.4[金属学及工艺—金属表面处理] O433.5[金属学及工艺—金属学]