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作 者:申继伟[1] 郭亨群[1] 吕蓬[1] 徐骏[2] 陈坤基[2] 王启明[3]
机构地区:[1]华侨大学信息科学与工程学院,福建泉州362021 [2]南京大学物理系,江苏南京210093 [3]中国科学院半导体研究所,北京100083
出 处:《发光学报》2008年第6期1045-1049,共5页Chinese Journal of Luminescence
基 金:国家自然科学基金(60678053);国家自然科学基金重点(60336010);国家重点基础研究发展“973”计划(2007CB613401)资助项目
摘 要:采用射频磁控反应溅射技术与热退火处理制备了Si/SiNx超晶格材料。利用吸收光谱和X射线衍射对材料进行表征。通过皮秒脉冲激光单光束Z-扫描技术研究了该材料在非共振吸收区的三阶非线性光学特性,实验结果表明,样品的非线性折射率为负值,非线性吸收属于双光子吸收。由实验数据得到材料的三阶非线性极化率实部和虚部分别为1.27×10-7,1.51×10-8esu,该值比体硅材料的三阶非线性极化率值大5个数量级。对材料光学非线性产生的机理进行了探讨,认为材料的非线性极化率的增加来源于材料量子限制效应的增强。In order to study preparation process recipes and nonlinear optical properties of Si/SiNx superlattice, Si/SiNx superlattice has been fabricated by RF magnetron sputtering technique and thermal annealing. The superlattice has been characterized by absorption measurement, and X-ray diffraction. Nonlinear optical properties of Si/SiNx superlattice was probed by a Z-scan technique at A = 1 064 nm. The experimental results show that the nonlinear refractive index of the sample is a negative value and the nonlinear absorption is twophoton absorption. The real and imaginary parts of χ^(3) have been found to be 1.27 × 10^ -7 (esu) and 1.51 × 10^-8(esu) according to the experimental data of Z-scan curve. The value of Si/SiNx superlattice is larger 5 scales than that of bulk silicon. The nonlinear mechanism of the material was discussed. The enhancement of non-linear refractive index is mainly attributed to intensive quantum confinement. The results indicate that such Si/SiNx superlattice material could be applied to the optoelectronics and microelectronies industry since it is compatible with Si technology.
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