InGaN基蓝色发光二极管量子阱阻挡层的优化设计  

Optimization Design of Quantum Barrier of InGaN Quantum Well in Blue Light-Emitting Diode

作　　者：李为军[1] 张波[1] 徐文兰[2] 

机构地区：[1]中国科学院上海技术物理研究所红外物理重点实验室,上海200083 [2]华东师范大学信息科学技术学院,上海200062

出　　处：《液晶与显示》2008年第6期651-657,共7页Chinese Journal of Liquid Crystals and Displays

基　　金：国家自然科学基金(No.10474020);上海市基础研究重大项目(No.06dj14008)资助

摘　　要：计算比对了不同垒层构型量子阱的极化电场,对极化场下能级结构、载流子浓度分布、自发辐射复合速率和缺陷所造成的Shockley-Read-Hall(SRH)非辐射复合速率进行了研究,确定内建电场引起的量子阱区域载流子浓度分布均匀性是影响器件效能高低的关键因素。对大电流下晶格优化的Al0.02In0.1Ga0.88N四元材料作为量子阱垒层的器件效能和发光特性下降的原因进行了深入分析,同时提出了具体的解决方法。The performance and optical properties of the blue-LEDs with different quantum barriers were investigated with a self-consistent APSYS simulation program. Specially,in the simulation, built-in polarization with different quantum barriers as well as under the polarized effect energy diagram, distribution of carriers concentration, radiative recombination rate and SRH recombination rate were studied and compared. The results suggest the uniform distribution of carrier＇s concentration induced by polarized electron is the most important factors for the improvement of blue-LED performance. The phenomena for the performance deterioration of the device with a lattice-matched quaternary Al0.02In0.1Ga0.88N quantum barrier under the high current were found and explained, and the optimized method was put forward.

关 键 词：发光二极管 ALINGAN 应力补偿 量子阱障碍层 数值模拟 

分 类 号：TN312.8[电子电信—物理电子学] TN304.23