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ALINGAN: 作品数：17被引量：24H指数：3; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：全知觉张国义魏同波王军喜李晋闽更多>>; 相关机构：中国科学院至芯半导体(杭州)有限公司南昌大学北京大学更多>>; 相关期刊：《光谱学与光谱分析》《发光学报》《物理学报》《液晶与显示》更多>>; 相关基金：国家自然科学基金国家高技术研究发展计划中国博士后科学基金国家重点基础研究发展计划更多>>

基于锥形超晶格p-AlInGaN层的AlGaN基深紫外发光二极管性能优化: 《原子与分子物理学报》2025年第1期101-107,共7页许愿张傲翔张鹏飞王芳刘俊杰刘玉怀; 国家自然科学基金(62174148);国家重点研发计划(2022YFE0112000,2016YFE0118400);河南省国际科技合作重点项目(231111520300);宁波市“科技创新2025”重大专项(2019B10129);智汇郑州·1125聚才计划(ZZ2018-45)。; 为了解决AlGaN基深紫外(DUV)发光二极管(LED)中的严重电子溢出和低空穴注入的问题,本文提出了一种新型锥形超晶格p-AlInGaN层,它大幅改善了基于AlGaN的DUV LED的光电特性.与传统结构相比,所提出结构的输出功率提高了337.8%;同时它的内...; 关键词：深紫外发光二极管 ALINGAN 锥形超晶格内部量子效率辐射复合

Epitaxial growth of 2.5-μm quaternary AlInGaN for n-cladding layer in GaN-based green laser diodes: 《Fundamental Research》2021年第6期672-676,共5页Lingrong Jiang Jianping Liu Aiqin Tian Masao Iked Liqun Zhang Peng Wu Wei Zhou Hui Yang; supported by National Natural Science Foundation of China(Grants No.61834008,61574160,61804164 and 61704184);National Key Research and Development Program of China(Grants No.2017YFE0131500 and 2017YFB0405000);Natural Science Foundation of Jiangsu Province(Grant No.BK20180254);Key Research and Devel-opment Program of Jiangsu Province(Grant No.BE2020004);China Postdoctoral Science Foundation(Grant No.2018M630619).; The ridge morphology,which is related to random atomic step meandering,appears in thick AlInGaN films grown by metal organic chemical vapor deposition on both GaN templates and free-standing GaN substrates;this can be...; 关键词：ALINGAN EPITAXY Morphology Strain

n-AlInGaN作为电子缓冲层量子势垒的GaN基LED发光效率提升研究: 《真空科学与技术学报》2017年第5期505-509,共5页王明军袁磊孙作斌龙浩; 为减少发光量子阱区的缺陷,缓解量子阱区的应力,减小极化效应,提高量子阱结晶质量,本文将n-AlInGaN作为非对称电荷谐振隧道(CART)层即电子缓冲层中的量子势垒应用于GaN基LED中,以降低外量子效率衰减、提高发光效率。实验数据表明,在相...; 关键词：氮化镓发光二极管非对称电荷谐振隧道 n-AlInGaN 量子势垒

High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier: 《Chinese Physics B》2017年第1期488-492,共5页Feng Xu Peng Chen Fu-Long Jiang Ya-Yun Liu Zi-Li Xie Xiang-Qian Xiu Xue-Mei Hua Yi Shi Rong Zhang You-Liao Zheng; supported by the National Natural Science Foundation of China(Grant Nos.61274003,61422401,51461135002,and 61334009);the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BY2013077,BK20141320,BE2015111,and BK20161324);the Program for New Century Excellent Talents in University,China(Grant No.NCET-11-0229);the Special Semiconductor Materials and Devices Research Funds from State Grid Shandong Electric Power Company,China; A new approach to fabricating high-quality AlInGaN film as a lattice-matched barrier layer in multiple quantum wells（MQWs） is presented. The high-quality AlInGaN film is realized by growing the AlGaN/InGaN short per...; 关键词：AlInGaN superlattices MQWs photoluminescence x-ray diffraction spectrum

高效InGaN/AlInGaN发光二极管的结构设计及其理论研究（英文）被引量：5: 《发光学报》2016年第2期208-212,共5页宿世臣裴磊磊张红艳王佳赵灵智; 国家自然科学基金(61205037;61574063);中国博士后基金(2013M53186;2015T80910);教育部新教师基金;高等学校博士学科点专项科研基金(20124407120017);广东省省级科技计划(2015A090905003;2014B040404067);广州市产学研协同创新重大专项(201508030033);广州市越秀区产学研项目(2013-CY-007)资助; 利用Advanced Physical Models of Semiconductor Devices(APSYS)理论对比研究了InGaN/AlInGaN和InGaN/GaN多量子阱作为有源层的InGaN基发光二极管的结构和电学特性。与InGaN/GaN基LED中GaN作为垒层材料相比,在AlInGaN材料体系中,通过调...; 关键词：氮化镓发光二极管效率下降

Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer被引量：1: 《Chinese Physics B》2014年第6期608-612,共5页卓祥景章俊李丹伟易翰翔任志伟童金辉王幸福陈鑫赵璧君王伟丽李述体; supported by the National Natural Science Foundation of China(Grant No.51172079);the Science and Technology Program of Guangdong Province,China(Grant Nos.2010B090400456 and 2010A081002002);the Science and Technology Program of Guangzhou City,China(Grant No.11A52091257); InGaN/AIlnGaN superlattice （SL） is designed as the electron blocking layer （EBL） of an InGaN/GaN-based light- emitting diode （LED）. The energy band structure, polarization field at the last-GaN-barrier/EBL inter...; 关键词：light-emitting diode InGaN/AIlnGaN superlattice efficiency droop

Effect of Hydrogen and Nitrogen Carrier Gas Ratio on the Structural and Optical Properties of AlInGaN Alloy: 《Chinese Physics Letters》2013年第10期199-202,共4页FENG Xiang-Xu LIU Nai-Xin ZHANG Lian ZHANG Ning ZENG Jian-Ping WEI Xue-Cheng LIU Zhe WEI Tong-Bo WANG Jun-Xi LI Jin-Min; Supported by the National High-Technology Research and Development Program of China under Grant No 2011AA03A105.; Undoped AlInGaN epilayers on GaN templates with different hydrogen(H_(2))and nitrogen(N_(2))carrier gas ratios(1:8,2:8,and 3:8 as samples 1,2 and 3,respectively)were grown.When the flow ratio of H_(2) and N_(2) rises ...; 关键词：ALINGAN flow LIFETIME

A 2DEG charge density based drain current model for various Al and In molefraction mobility dependent nano-scale AlInGaN/AlN/GaN HEMT devices: 《Journal of Semiconductors》2013年第4期24-29,共6页Godwin Raj Hemant Pardeshi Sudhansu Kumar Pati N Mohankumar Chandan Kumar Sarkar; We present a two-dimensional electron gas （2DEG） charge-control mobility variation based drain cur- rent model for sheet carrier density in the channel. The model was developed for the AIInGaN/A1N/GaN high- electron...; 关键词：2DEG Fermi level ALINGAN

Enhanced Light Extraction in AlInGaN UV Light-Emitting Diodes by an Embedded AlN/AlGaN Distributed Bragg Reflector: 《Chinese Physics Letters》2012年第10期244-247,共4页LIU Hui ZHAO Heng HOU Jin LIU Dan GAO Yi-Hua; Supported by the National Natural Science Foundation of China under Grant Nos 11074082 , 1147014.; A novel kind of AlInGaN ultraviolet(UV)light-emitting diode(LED)with an embedded AlN/Al_(0.3)Ga_(0.7)N distributed Bragg reflector(DBR)is proposed to enhance light extraction efficiency(LEE).The simulation technique w...; 关键词：ALINGAN SAPPHIRE SCATTERING

Characterization of quaternary AlInGaN epilayers and polarization-reduced InGaN/AlInGaN MQW grown by MOCVD: 《Journal of Semiconductors》2009年第11期21-25,共5页刘乃鑫王军喜闫建昌刘喆阮军李晋闽; We have demonstrated the growth of quaternary AIlnGaN compounds at different growth temperatures and pressures with metalorganic chemical vapor deposition （MOCVD）. The optical properties of the samples have been inv...; 关键词：AIInGaN UV-LEDs MOCVD

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