A 2DEG charge density based drain current model for various Al and In molefraction mobility dependent nano-scale AlInGaN/AlN/GaN HEMT devices  

作　　者：Godwin Raj Hemant Pardeshi Sudhansu Kumar Pati N Mohankumar Chandan Kumar Sarkar 

机构地区：[1]Nano Device Simulation Laboratory,Electronics and Telecommunication Engineering Department,Jadavpur University,Kolkata-700 032,India [2]SKP Engineering College,Tiruvannamalai,Tamilnadu-606 611,India

出　　处：《Journal of Semiconductors》2013年第4期24-29,共6页半导体学报（英文版）

摘　　要：We present a two-dimensional electron gas （2DEG） charge-control mobility variation based drain cur- rent model for sheet carrier density in the channel. The model was developed for the AIInGaN/A1N/GaN high- electron-mobility transistor. The sheet carrier density model used here accounts for the independence between the Fermi levels Ef and ns along with mobility for various AI and In molefractions. This physics based ns model fully depends upon the variation of El, u0, the first subband E0, the second subband El, and as. We present a physics based analytical drain current model using ns with the minimum set of parameters. The analytical resuks obtained are compared with the experimental results for four samples with various molefraction and barrier thickness. A good agreement between the results is obtained, thus validating the model.We present a two-dimensional electron gas （2DEG） charge-control mobility variation based drain cur- rent model for sheet carrier density in the channel. The model was developed for the AIInGaN/A1N/GaN high- electron-mobility transistor. The sheet carrier density model used here accounts for the independence between the Fermi levels Ef and ns along with mobility for various AI and In molefractions. This physics based ns model fully depends upon the variation of El, u0, the first subband E0, the second subband El, and as. We present a physics based analytical drain current model using ns with the minimum set of parameters. The analytical resuks obtained are compared with the experimental results for four samples with various molefraction and barrier thickness. A good agreement between the results is obtained, thus validating the model.

关 键 词：2DEG Fermi level ALINGAN 

分 类 号：TN304[电子电信—物理电子学]