Effect of Hydrogen and Nitrogen Carrier Gas Ratio on the Structural and Optical Properties of AlInGaN Alloy  

作　　者：FENG Xiang-Xu LIU Nai-Xin ZHANG Lian ZHANG Ning ZENG Jian-Ping WEI Xue-Cheng LIU Zhe WEI Tong-Bo WANG Jun-Xi LI Jin-Min 冯向旭;刘乃鑫;张连;张宁;曾建平;魏学成;刘喆;魏同波;王军喜;李晋闽(Research and Development Center for Semiconductor Lighting,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083)

机构地区：[1]Research and Development Center for Semiconductor Lighting,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083

出　　处：《Chinese Physics Letters》2013年第10期199-202,共4页中国物理快报（英文版）

基　　金：Supported by the National High-Technology Research and Development Program of China under Grant No 2011AA03A105.

摘　　要：Undoped AlInGaN epilayers on GaN templates with different hydrogen(H_(2))and nitrogen(N_(2))carrier gas ratios(1:8,2:8,and 3:8 as samples 1,2 and 3,respectively)were grown.When the flow ratio of H_(2) and N_(2) rises from 1:8 to 3:8,an indium composition decrease from 3%to 1.2%is observed while the aluminum content stays constant at any flow ratio.Due to the quantum-dot-like effect,photoluminescence intensity is enhanced in the sample with the low carrier gas flow ratio of H_(2)/N_(2).However,the potential well caused by indium uneven distribution is nonuniform,which is more severe in the sample with carrier gas flow ratio 1:8.The process of carrier transfer from shallow to deep potential wells would be more difficult to accomplish,resulting in the reduction of the photoluminescence intensity.This is found to be consistent with the carriers'lifetime with the help of time-resolved photoluminescence.

关 键 词：ALINGAN flow LIFETIME 

分 类 号：TG1[金属学及工艺—金属学]