Epitaxial growth of 2.5-μm quaternary AlInGaN for n-cladding layer in GaN-based green laser diodes  

作　　者：Lingrong Jiang Jianping Liu Aiqin Tian Masao Iked Liqun Zhang Peng Wu Wei Zhou Hui Yang 

机构地区：[1]Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China [2]School of Nano-tech and Nano-bionics,University of Science and Technology of China,Hefei 230026,China [3]Key Laboratory of Nanodevices and Applications,Chinese of Academy of Science,Suzhou 215123,China [4]School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China

出　　处：《Fundamental Research》2021年第6期672-676,共5页自然科学基础研究（英文版）

基　　金：supported by National Natural Science Foundation of China(Grants No.61834008,61574160,61804164 and 61704184);National Key Research and Development Program of China(Grants No.2017YFE0131500 and 2017YFB0405000);Natural Science Foundation of Jiangsu Province(Grant No.BK20180254);Key Research and Devel-opment Program of Jiangsu Province(Grant No.BE2020004);China Postdoctoral Science Foundation(Grant No.2018M630619).

摘　　要：The ridge morphology,which is related to random atomic step meandering,appears in thick AlInGaN films grown by metal organic chemical vapor deposition on both GaN templates and free-standing GaN substrates;this can be primarily attributed to the in-plane compressive strain in the thick layer.Therefore,a 2.5-μm Al 0.08 In 0.0123 GaN film with a slightly tensive strain was grown,with a regular and smooth step-flow morphology;the root mean square deviation of the film(with a size of 5μm×5μm)was 0.56 nm.

关 键 词：ALINGAN EPITAXY Morphology Strain 

分 类 号：TN31[电子电信—物理电子学]