n-AlInGaN作为电子缓冲层量子势垒的GaN基LED发光效率提升研究  

Efficiency Enhancement of GaN-Based Light Emitting Diode with Quantum Barrier Layer of n-AlInGaN

作　　者：王明军 袁磊 孙作斌 龙浩[2] 

机构地区：[1]武汉产品质量监督检验所,武汉430048 [2]中南民族大学电子信息工程学院,武汉430074

出　　处：《真空科学与技术学报》2017年第5期505-509,共5页Chinese Journal of Vacuum Science and Technology

摘　　要：为减少发光量子阱区的缺陷,缓解量子阱区的应力,减小极化效应,提高量子阱结晶质量,本文将n-AlInGaN作为非对称电荷谐振隧道(CART)层即电子缓冲层中的量子势垒应用于GaN基LED中,以降低外量子效率衰减、提高发光效率。实验数据表明,在相同的正向偏压下,相对于传统的以GaN为CART量子势垒的LED,采用n-AlInGaN作为势垒层具有更大光输出功率。原子力显微镜结果显示,以n-AlInGaN为CART势垒层能有效截止底层产生的线性位错,降低量子阱区由于晶格失配造成的应力。由于极化作用的减小,及电流扩展效应,采用n-AlInGaN作为势垒层样品的外量子效率衰减减弱,器件的抗静电能力也明显增强。A novel quantum barrier layer （QBL） of n-type AIlnGaN was synthesized, by metal-organic chemical vapor deposition （ MOCVD ） in the charge asymmetric resonance tunneling （CART） structure of GaN-based light-emitting diodes （LEDs）. The impact of the newly-developed n-AllnGaN QBL on the enhancement of light emission efficiency,reduction of stress and improvement of LEDs＇ properties was investigated with atomic force microscopy （AFM）. The results show that the n-AllnGaN QLB in CART structure outperformed the conventional GaN QBL. To be specific, the n-AllnGaN QLB increased LED＇ s light output-power, relaxed the stress in the quantum barrier because of the significant reduction of the threading dislocation and defect-induced lattice mismatch, and decreased the polarization. Besides, as the injection current increased, the n-AllnGaN QBL is capable of markedly- weakening the efficiency droop and considerably enhancing the negative electrostatic discharge endurance voltage of LEDs.

关 键 词：氮化镓 发光二极管 非对称电荷谐振隧道 n-AlInGaN 量子势垒 

分 类 号：TN312.8[电子电信—物理电子学] TN383.1