垂直布里奇曼法生长Cd_(1-x)Zn_xTe晶体的位错分布研究  

Study of Dislocation Distribution on Cd_(1-x)Zn_xTe Crystal Using Vertical Bridgman Method

作　　者：王智贤[1] 赵北君[1] 朱世富[1] 邱春丽[1] 李新磊[1] 何知宇[1] 陈宝军[1] 

机构地区：[1]四川大学材料科学系,四川成都610064

出　　处：《新疆大学学报（自然科学版）》2008年第4期458-460,465,共4页Journal of Xinjiang University(Natural Science Edition)

基　　金：国家自然科学基金项目(60276030)

摘　　要：使用观察位错蚀坑密度方法研究了垂直布里奇曼法生长的Cd1-xZnxTe(CZT)单晶体位错分布规律.实验中选择(110)面几乎平行于径向的晶片,使用EAg-II腐蚀剂对晶片进行腐蚀,观察了晶面上蚀坑的形貌及分布,计算了位错蚀坑密度,得到CZT单晶体位错密度的分布趋势.结合晶体生长工艺,运用完全弛豫弹性应力近似理论讨论了CZT晶体位错密度分布规律.The dislocation distribution of Cd（1-x）ZnxTe （CZT） crystal with Vertical Bridgman Method had been analyzed by observing the etch pits density. Selecting CZT wafers which the face of （110） almost parallel the radial direction of the crystal, EAs-II solutions were employed to etch the CZT wafers. Etch pits were observed by the optical microscope and were obtained the dislocation density distribution of the crystal grew by Vertical Bridgman Method. The law of dislocation distribution on the CZT crystal was studied by fully relaxed of elastic stress approximation with crystal growth technique.

关 键 词：CDZNTE晶体 蚀坑 位错分布 完全弛豫弹性应力近似 

分 类 号：O77[理学—晶体学]