新型红外晶体硫锗镓银的多晶合成  

Polycrystal Synthesis of New Infrared Nonlinear Optical Crystal AgGaGeS_4

作　　者：吴海信[1] 王振友[1] 倪友保[1] 耿磊[1] 毛明生[1] 黄飞[1] 

机构地区：[1]中国科学院安徽光学精密机械研究所,合肥230031

出　　处：《人工晶体学报》2008年第6期1370-1373,共4页Journal of Synthetic Crystals

摘　　要：本文直接使用高纯Ag,Ga,Ge,S单质作为原料合成AgGaGeS4多晶。为防止S蒸气高压使多晶合成管炸裂,采用双温区气相输运的合成方法。对合成的多晶作粉末衍射(XRD)分析,衍射图谱与标准JC-PDF卡片上峰值位置一致,表明样品为高纯单相AgGaGeS4多晶。使用该多晶原料成功生长出了优质单晶,并对合成工艺中存在的关键问题进行了讨论。High purity Ag, Ga, Ge, S simple substance were used directly to synthesize AgGaGeS4 polycrystals. To avoid explosion of the synthetic chamber due to the high pressure of the sulfur vapor, polycrystalline AgGaGeS4 was synthesized by two-temperature-zone vapor transportation. XRD method was used to characterize the synthetic materials. The diffraction spectrum of the polycrystalline materials is perfectly the same as the standard JC-PDF card according to the reflective peak. The results indicate that the polycrystalline materials are high-quality AgGaGeS4 polycrystals with single phase. Single crystal was synthesized successfully by using the AgGaGeS4 polycrystals. Some critical problems of the synthetic process were also discussed.

关 键 词：AgGaGeS4 多晶合成 二温区 气相输运 

分 类 号：O78[理学—晶体学]