载气流量对氧化锌纳米棒阵列的影响(英文)  

Effect of Carrier Gas Flux on ZnO Nanorod Arrays Grown by MOCVD

作　　者：蔡芳芳[1] 魏鸿源[1] 范海波[1] 杨安丽[1] 张攀峰[1] 刘祥林[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,北京100083

出　　处：《人工晶体学报》2008年第6期1401-1405,共5页Journal of Synthetic Crystals

基　　金：Project supported by the Special Funds for Major State Basic Research Project(973 program) of China(No.2006CB604907)

摘　　要：本文研究了在金属有机化学气相沉积法(MOCVD)生长过程中,锌(Zn)源和氧(O)源载气流量的改变对ZnO纳米棒阵列的影响。通过改变源材料载气的流量,得到了直径从150nm到20nm范围、均一性明显改善的ZnO纳米棒。采用扫描电子显微镜(SEM),X射线衍射图谱(XRD),拉曼光谱(Raman)和光致荧光光谱(PL)等测试手段对样品的形貌结构和光学特性进行了表征。SEM和XRD结果表明当Zn源和O源的载气流量均为1SLM时,所得的纳米棒直径最均匀,排列整齐,垂直于衬底生长,且结晶度最好。PL谱显示纳米棒的紫外带边峰发生了蓝移,可能与表面效应的增加有关。ZnO nanorod arrays with different morphologies were grown by metalorganic chemical vapor deposition （MOCVD）. The diameters of nanorods range from 150 nm to 20 nm through changing the carrier gas flux during the growth process. Measurements such as scanning electron microscope （SEM）, X-ray diffraction （XRD）, Raman scattering and photoluminescence （pL） spectrum were employed to analyze the differences of these nanorods. It was found that when both carrier gas flux of Zn and O reactant are 1 SLM, we can obtain the best vertically aligned and uniform nanorods. Furthermore, the PL spectrum reveals a blueshift of UV emission peak, which may be assigned to the increase of surface effect.

关 键 词：氧化锌纳米棒 MOCVD 载气流量 形貌 

分 类 号：TN304[电子电信—物理电子学]