溶胶-凝胶法制备BiFeO_3薄膜的结构及物性研究  

Structural and Physical Properties of BiFeO_3 Film Made by Sol-gel Method

作　　者：李丽[1] 刘保亭[1] 张新[1] 闫小兵[1] 郭颖楠[1] 

机构地区：[1]河北大学物理科学与技术学院,保定071002

出　　处：《人工晶体学报》2008年第6期1430-1434,共5页Journal of Synthetic Crystals

基　　金：973前期研究专项(2007CB616910);国家自然科学基金(No.50572021;60876055);河北省自然科学基金重点项目(E2008000620);教育部基金项目(2005-546;207013)

摘　　要：应用溶胶-凝胶法在Pt/Ti/SiO2/Si(001)基片上制备了BiFeO3薄膜,构架了Pt/BiFeO3/Pt电容器。采用X射线衍射仪和铁电测试仪研究了Pt/BiFeO3/Pt电容器的结构和物理性能。实验发现BiFeO3最佳的结晶温度为600℃,X射线衍射图谱显示BiFeO3薄膜结晶状况良好,原子力显微镜照片显示BiFeO3表面颗粒均匀。Pt/BiFeO3/Pt电容器具有良好的电学性能,在驱动电压为5V的情况下,Pt/BiFeO3/Pt电容器的电滞回线具有良好的对称性,漏电流密度小于10-4A/cm2,研究发现BiFeO3薄膜log(J)/log(E)关系满足空间电荷限制电流传导机制。Pt/BiFeO3/Pt ferroelectric capacitors have been fabricated on Pt/Ti/SiOz/Si substrates via a sol-gel method. X-ray diffraction technique and a ferroelectric tester were used to characterize the structural and physical properties of Pt/BiFeOa/Pt capacitors. It is found that the optimized temperature of BiFeO3 film is 600 ℃. The X-ray diffraction （XRD） measurement indicates that BiFeO3 film is well- crystalized. The atomic force microscopy （AFM） image indicates BiFeO3 film is dense with uniform grains. Hysteresis loop of Pt/BiFeO3/Pt capacitor, measured at 5 V, is very symmetric. Leakage current density of Pt/BiFeO3/Pt capacitor at 5 V is less than 10^-4A/cm^2, the relation of log（J） vs log（E） curve agrees well with the theory of space-charge-limited current.

关 键 词：铁酸铋薄膜 溶胶-凝胶法 铁电性能 漏电流 

分 类 号：O484[理学—固体物理]