超细凸点节距WLP制备关键工艺技术研究  

Investigation into Key Technology for WLP with Fine-Pitch Solder Bumping

作　　者：张颖[1] 罗驰[1] 

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2008年第6期765-768,共4页Microelectronics

基　　金：部委预研基金资助项目"模拟集成电路圆片级封装技术(WLP)工艺技术研究"(Y230601)

摘　　要：通过优化结构设计,改善厚胶光刻工艺条件,采用凸点真空回流等举措,解决了制备超细节距圆片级封装(WLP)工艺中遇到的技术难题,提升了WLP的工艺技术水平;并将具有更优性能的BCB材料应用于WLP的介质层,成功制备出凸点节距为90μm和280μm的样品。研制的样品已通过相关测试和考核。Technical problems involved in preparing wafer level packaging （WLP） with fine pitch solder bumping were solved by optimizing structural design, improving photo-resist processing procedures and using vacuum thermal cycling. And benzocyclobutene （BCB）, which has a superior property over polyimide （PI）, was used as passivation material. Samples with 90μm and 280 μm pitch were prepared using these techniques, which have passed quality assurance test.

关 键 词：超细节距 圆片级封装 苯并环丁烯 

分 类 号：TN305[电子电信—物理电子学]