一种采用厚膜混合工艺的10位高速D/A转换器  

A 10-Bit High-Speed D/A Converter Using Thick-Film Hybrid IC Process

作　　者：张俊安[1,2] 高煜寒[1] 张加斌[1,2] 朱璨[1,2] 王锐[1] 

机构地区：[1]中国电子科技集团公司第二十四研究所 [2]模拟集成电路国家级重点实验室

出　　处：《微电子学》2008年第6期831-834,共4页Microelectronics

摘　　要：介绍了一种采用厚膜混合集成工艺制作的倒R-2R电阻网络结构的高速10位D/A转换器电路。重点分析了二极管电流开关对输出电流建立时间的影响,提出了一种改进型二极管电流开关结构,减少了二极管电流开关中电荷泄放引起的过冲,使电流建立时间大大减小,样品电路测试典型值为25ns。A 10-bit high-speed D/A converter with attenuation R-2R resistance network structure based on thickfilm hybrid IC was presented. Effect of the diode current switch on the output current settling time was analyzed. A modified diode current switch structure was proposed to reduce overshoot caused by charge leakage in diode current switch, greatly decreasing current settling time. Test results of the prototype device showed that the DAC had a typical output current settling time of about 25 ns.

关 键 词：倒R-2R电阻网络 D/A转换器 混合集成电路 电流开关 

分 类 号：TN792[电子电信—电路与系统]