半导体器件在辐射作用下的电学输出性能  

Electrical Capabilities of Silicon Diode on Irradiating

作　　者：王关全[1] 张华明[1] 罗顺忠[1] 胡睿[1] 高晖[1] 杨玉青[1] 魏洪源[1] 宋宏涛[1] 

机构地区：[1]中国工程物理研究院核物理与化学研究所,四川绵阳621900

出　　处：《同位素》2008年第4期198-203,共6页Journal of Isotopes

基　　金：中国工程物理研究院科学技术发展基金资助(2007A02001)

摘　　要：半导体结型器件是决定辐射伏特效应同位素电池能量转换效率的核心部件。本工作采用加速器产生的不同能量电子束和^(63)Ni源的β射线对硅基PiN结型器件进行辐照,在线测量了其电学输出性能。结果表明,当电子束能量为18 keV时,能量转换效率>4%;电子束能量为6 keV时,能量转换效率为0.16%～0.33%;活度为2.96×10~8Bq的^(63)Ni源片辐照的能量转换效率约为0.1%。Semiconductor diode, the core of betavoltaic microbattery, is the key to decide energy conversion efficiency. A sort of silicon diodes were irradiated by electron beam and 63Ni radioactive source, and their electrical capabilities were measured during the irradiation. The experiment results indicate that the energy conversion efficiency was higher than 4% for 18 keV electron beam, between 0.16% and 0.33% for 6 keV electron beam, and about 0.1% for 63 Ni radioactive source with an activity of 2.96 ×10^8 Bq.

关 键 词：辐射伏特效应同位素电池 半导体器件 能量转换效率 

分 类 号：TM910.2[电气工程—电力电子与电力传动]