体硅FinFET三维模拟  

Bulk FinFET 3D Simulation

作　　者：周华杰[1] 徐秋霞[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《功能材料与器件学报》2008年第6期949-954,共6页Journal of Functional Materials and Devices

基　　金：国家重点基础研究发展计划资助(编号:2006CB302704);国家自然科学基金资助项目(编号:60576032)

摘　　要：利用三维模拟软件Davinci对体硅FinFET器件进行了详细的模拟。模拟结果显示体硅FinFET器件能够有效的抑止短沟道效应,具有驱动电流大、散热好、成本低等优点。为了获得好的亚阈值特性,Fin的厚度要比较薄,同时Fin的高度不能太低,以保持足够的高度来抑止短沟道效应。沟道可以采用低掺杂或未掺杂设计,从而减少沟道内杂质对载流子的散射作用和杂质涨落效应对器件性能的影响。另外,为了获得合适的器件阈值电压,体硅FinFET器件应当采用功函数在中间带隙附近的材料做栅电极,同时采用适当的功函数调节方法来获得合适的阈值电压。This article use 3D simulation software Davinci simulate Bulk FinFET device particularly. Simulation results indicate that Bulk FinFET can suppress SCE efficiently. Bulk FinFET device has many advantages, such as high drive current, good dissipation characteristics and low cost. In order to obtain good sub - threshold characteristics, the thickness of Fin should be thin and the height of Fin must high enough to suppress SCE. The doping concentration of channel can be low or undoped to reduce scattering effect of impurity to carrier and dopant fluctuation effect. In addition, Bulk FinFET device should use mid -gap material as gate electrode and appropriate modulation method to get suitable threshold voltage.

关 键 词：体硅 FINFET 新结构 

分 类 号：TN304[电子电信—物理电子学]