DC～40GHz反射型GaAs MMIC SPST开关  

DC to 40 GHz Reflective GaAs MMIC SPST Switch

作　　者：方园[1] 李富强[1] 高学邦[1] 吴洪江[1] 魏洪涛[1] 刘文杰[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2008年第12期1115-1118,共4页Semiconductor Technology

基　　金：国防科技重点实验室资助项目(9140C0610040609)

摘　　要：介绍了基于GaAs PHEMT工艺设计的一款宽带反射型MMIC SPST开关的相关技术,基于成熟的微波单片集成电路设计平台开展了宽带SPST开关设计。工作频率范围为DC^40 GHz,插入损耗≤0.8 dB,隔离度≥25 dB,驻波比≤1.4∶1。同时,对电路的通孔特性进行了分析,对电路设计流程进行了阐述。要获得期望带宽的开关,如何选择控制器件的通孔连接方式,以及通孔数量对插入损耗等性能的影响。最终,具有小尺寸和优异微波性能的GaAs微波单片集成单刀单掷开关电路成功开发。The design method of the broadband monolithic microwave integrated circuit （MMIC） SPST switch with low insertion loss was introduced. The die was fabricated by GaAs PHEMT technology and designed with ADS. Frequency range is DC to 40 GHz, inse^on loss is less than 0.8 dB, isolation is more than 25 dB, VSWR of on state is less than 1.4：1. The analysis of circuit back via characteristics and design procedures were also included. It is concluded that the device periphery can be selected for the desired bandwidth, while the number of back vias is decided to achieve the insertion loss. Finally, GaAs MMIC SPST switch with small size and excellent microwave performances from DC to 40 GHz band were successfully developed.

关 键 词：宽带 低插入损耗 GAAS微波单片集成电路 单刀单掷开关 

分 类 号：TN454[电子电信—微电子学与固体电子学]