MISiC肖特基二极管式氢敏传感器模型研究  

Study on model of MISiC Schottky diodes hydrogen sensor

作　　者：申君君[1] 王巍[1] 王玉青[1] 

机构地区：[1]重庆邮电大学光电工程学院,重庆400065

出　　处：《重庆邮电大学学报（自然科学版）》2008年第6期692-695,共4页Journal of Chongqing University of Posts and Telecommunications(Natural Science Edition)

基　　金：重庆市科委自然科学基金项目(CSTC2006BB2364)

摘　　要：在结合考虑6H—SiC肖特基二极管正向热电子发射理论和氢吸附效应的基础上，研究了MIS氢敏传感器的敏感机理，建立了传感器模型，具体分析了绝缘层厚度、灵敏度对传感器特性的影响。利用MATLAB对传感器的电流一电压响应特性、灵敏度、电流分辨率与绝缘层之间的关系进行了仿真，结果表明绝缘层厚度、灵敏度是影响传感器性能的重要因素，并确定了在300℃时传感器最佳绝缘层厚度为2—2．35nm，从而有效地提高了传感器灵敏度。A model of metal-insulator-semiconductor gas sensor was established by combining 6H-SiC Schottky barrier diode thermionic emission with adsorption of hydrogen, and its response mechanism was analyzed. The influence for the sensor was discussed concretely by analyzing the insulator thickness and sensitivity in the research. In addition, the relationship between the I-V characteristics, sensitivity, current resolution and the thickness of the insulator were simulated by MAT- LAB, the results show that the insulator thickness and the sensitivity are important factors of the hydrogen sensor. The optimum insulator thickness is found between 2 to 2.35 nm at the temperature of 300℃, then the excellent sensitivity characteristics have been achieved.

关 键 词：6H-SIC 肖特基二极管 氢敏传感器 

分 类 号：TN311.8[电子电信—物理电子学]