用SACP技术研究ELID磨削后的单晶硅片表面变质层  

An Investigation of The Damaged Layer on The Silicon Wafer Surface by SACP Technique

作　　者：刘世民 于栋利[1,2] 田永君 何巨龙[1,2] 李东春 陈世镇[1,2] 

机构地区：[1]秦皇岛玻璃研究设计院 [2]燕山大学

出　　处：《电子显微学报》1998年第1期51-54,共4页Journal of Chinese Electron Microscopy Society

基　　金：国家自然科学基金

摘　　要：利用扫描电镜的选区电子通道花样技术研究了用ＥＬＩＤ磨削技术制作的两种单晶硅片磨削样品的表面变质层的厚度及其结构。结果表明，表面粗糙度依次为９．５ｎｍ和２２．５ｎｍ两种〈１１１〉单晶硅片样品的变质层厚度分别为２．８μｍ和４．８μｍ。Damaged layer was formed on the surface of silicon wafer during using ELID grinding technique to refine its surface roughness.the thickness and the structure of the damaged layer on the surface of two monocrystalline silicon wafers have been investigated by SACP technique.The results show that the thickness of the damaged layer on silicon wafers with surface roughness of 95nm and 227nm are 28μm and 48μm respectively.

关 键 词：SACP ELID磨削 硅片 超大规模 集成电路 

分 类 号：TN405.2[电子电信—微电子学与固体电子学]