选择腐蚀确定垂直腔面发射激光器生长偏差对模式波长的影响  

Determining the Influence of Growth Deviation on Mode Wavelength of VCSEL by Selective Etching

作　　者：张益潘 钟杜云 陈志标[1] 郑联喜[1] 吴荣汉[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1998年第1期76-80,共5页半导体学报（英文版）

摘　　要：本文提出一种可在垂直腔面发射激光器外延生长后准确确定其模式生长偏差的简便方法．利用选择性湿法腐蚀，分别测出器件各主要部分的微区光反射谱，通过模拟计算得到这些部分的厚度偏差及其对模式波长偏移的影响，使调整后再生长的器件模式位置大为改善。Abstract A simple and convenient method that could determine the mode growth deviation of vertical cavity surface emitting lasers(VCSEL) has been provided. The micro spot reflection spectra of the main parts of the devices are measured through selective etching, and then the thickness deviation of these parts and their influence on the mode wavelength shift are obtained by simulative calculation. As a result, the mode position of the device grown after a process regulation have been improved greatly, and the reliable information can be provided for the mode adjusting in the device fabrication.

关 键 词：VCSEL 外延生长 腔面发射 激光器 

分 类 号：TN304.054[电子电信—物理电子学] TN243