HBT大信号模型及PIN/HBT集成光接收前端设计  

HBT Large-signal Model and Design of PIN/HBT Monolithic Integrated Photoreceiver Front-end

作　　者：吴强[1] 黄永清[1] 黄辉[1] 苗昂[1] 李轶群[1] 任晓敏[1] 

机构地区：[1]北京邮电大学光通信与光波技术教育部重点实验室,北京100876

出　　处：《半导体光电》2008年第6期941-944,共4页Semiconductor Optoelectronics

基　　金：国家"973"计划项目(2003CB314901);高等学校学科创新引智计划项目(B07005);教育部"长江学者和创新团队发展计划项目(IRT0609);国家"863"计划项目(2006AA03Z416;2007AA03Z418);北京市教育委员会共建项目(XK100130637)

摘　　要：对GP大信号模型及其参数提取方法进行了研究,并对发射极尺寸为2μm×19μm的InP/InGaAs HBT进行了建模。模型的仿真结果表明,所建模型能较为精确地表征实际HBT器件的直流和高频小信号特性。基于建立的HBT大信号模型设计并制备出InP基PIN+HBT单片集成光接收前端,经在片测试,集成前端的3dB带宽可达3GHz。The model and parameters-extraction method of GP large-signal were studied. Then the InP/InGaAs HBT with an emitter size of 2μm×19μm was modeled based on the above results. By comparison of the simulated results with measured date, the model could correctly characterize DC and high-frequency small-signal of the fabricated HBT devices. InP-based PIN＋ HBT monolithic integrated photoreceiver front-end was fabricated using the HBT large-signal model, and the 3 dB bandwidth of 3 GHz was observed from.

关 键 词：HBT GP大信号模型 单片集成 光接收前端 

分 类 号：TN851[电子电信—信息与通信工程]