反应磁控溅射法制备氧化钒薄膜  

Vanadium Oxide Thin Films Prepared by Reactive Magnetron Sputtering

作　　者：刘凤举[1] 余志明[1] 陈爽[1] 方梅[1] 

机构地区：[1]中南大学有色金属材料科学与工程教育部重点实验室,湖南长沙410083

出　　处：《稀有金属材料与工程》2008年第12期2221-2225,共5页Rare Metal Materials and Engineering

摘　　要：采用反应磁控溅射加真空退火分别在玻璃和Si(100)基底上制备氧化钒薄膜,利用X射线衍射和原子力显微镜分析其物相和表面形貌。结果表明:氧气体积分数低于15%时,玻璃上薄膜为低价钒氧化物,Si(100)上薄膜为V2O5(001)织构和V2O3(104)织构,高于20%时两基底上薄膜均为V2O5;玻璃上V2O5薄膜500℃下退火3h生成VO2,退火后薄膜粗糙度明显下降;Si(100)上V2O5薄膜500℃下退火2h生成V2O3(104)织构,退火后薄膜粗糙度变化不大。Vanadium oxide thin films were prepared on the substrates of glass and Si （100） by reactive magnetron sputtering and vacuum annealing. The phases and morphology were detected respectively by XRD and atomic force microscopy. The results showed that when the oxygen volume percent （PO2） was less than 15%, the films on the glass substrate were vanadium oxides with low-valences while on the silicon were textures of V2O5 （100） and V2O3（104）. When PO2 was more than 20%, the films on the both substrates were V2O5. V2O5 film on glass mainly, which annealed at 500 ℃ for 3 h, changed into VO2 and its roughness decreased distinctly. The film on Si （100） became textural V2O3（104） and its roughness hardly changed after annealing under 500 ℃ for 2 h.

关 键 词：反应磁控溅射 真空退火 V2O3 VO2 V2O5 

分 类 号：TB383.2[一般工业技术—材料科学与工程]