利用电化学刻蚀工艺制备p型硅基大孔深通道阵列  

Formation of p-Type Silicon-based Deep Macropore Channel Array by Utilizing Electrochemical Etching Technology

作　　者：高延军[1,2] 端木庆铎[1] 王国政[1] 李野[1] 田景全[1] 

机构地区：[1]长春理工大学理学院,吉林长春130022 [2]吉林大学电子科学与工程学院,吉林长春130012

出　　处：《兵工学报》2008年第12期1497-1500,共4页Acta Armamentarii

摘　　要：在自制的三极电解槽中,采用浓度不同的氢氟酸(HF)电解液在一定掺杂浓度的p型硅基上,研究了大孔深通道阵列的形成过程。通过一系列实验、电化学测试与分析,从理论上论述了p型大孔深通道阵列的形成微观机制,同时解释了电化学刻蚀反应与HF浓度的关系,指出了HF浓度决定电化学反应刻蚀的进行与否与样品质量的关键。提供了一种利用电化学刻蚀工艺制备p型大孔深通道阵列经济实用的方法,实验结果对其形成具有指导意义。The formation of deep macropore channel array of p-type silicon in HF electrolyte was investigated. Then a series of electrochemical etching experiments and tests were carried out in three poles electrobath using different concentration HF electrolytes. The formation mechanism of deep macropore channel array of p-type silicon was theoretically described, and the relationship between the electrochemical etching reaction and the HF concentration was given. It is shown that that HF concentration is a very important factor that determines whether electrochemical reaction is accomplished or not. The electrochemical etching method of p-type silicon macropore array in aqueous fluoride solutions is economic and practical for fabricating deep macropores. The experimental consequences are benefit to the electrochemical etching technology of silicon-based deep macropore array.

关 键 词：电子物理学 电化学刻蚀 大孔深通道阵列 氢氟酸 p型硅 

分 类 号：TN205[电子电信—物理电子学] TN223