准分子激光对半导体材料HgCdTe和Si的损伤实验研究  

The experimental study of Excimer laser damage process in HgCdTe and Si semiconductor material

作　　者：戚树明[1] 陈传松[1] 郭娟[1] 周新玲[1] 王娟[1] 满宝元[1] 

机构地区：[1]山东师范大学物理与电子科学学院,济南250014

出　　处：《激光杂志》2008年第6期72-74,共3页Laser Journal

基　　金：国家自然科学基金(10474059);山东省自然科学基金(Y2007A05)资助

摘　　要：本文利用光学显微镜和扫描电镜对248nm准分子强激光辐照HgCdTe和Si晶片的表面损伤形貌和损伤过程进行了对比分析,结果表明在248nm准分子激光作用下,HgCdTe材料主要表现为解离剥蚀破坏和熔融烧蚀破坏,准分子激光对其损伤机理既包含光化学作用也包含光热作用;而Si材料则主要表现为熔融烧蚀破坏,准分子激光对其损伤机理主要为光热作用。In this work, the surfaces of HgCdTe and Si materials irradiated by 248nm excimer laser are examined by an optical microscope and a scoanning electron microscope. Through comparative analysis of the damage surfaces, it is found that the damage mechanism of the HgCdTe crystal is very different from that of the Si. The former incorporates both photochemical and photothermal effect. However, the later is dominantly photothermal effect.

关 键 词：248nm准分子激光 损伤机理 光化学作用 光热作用 

分 类 号：TN249[电子电信—物理电子学]