磁控溅射氧化钒薄膜的相组成及性能  

Phase compositions and property of VOx thin films by magnetron sputtering

作　　者：陈爽[1,2] 余志明[1,2] 刘凤举[1,2] 方梅[1,2] 

机构地区：[1]中南大学材料科学与工程学院,长沙410083 [2]有色金属材料科学与工程教育部重点实验室,长沙410083

出　　处：《中国有色金属学报》2008年第12期2196-2201,共6页The Chinese Journal of Nonferrous Metals

摘　　要：采用反应磁控溅射法在玻璃基底上沉积氧化钒薄膜,分别利用X射线衍射(XRD)、原子力显微镜(AFM)和红外光谱仪分析样品的物相、表面形貌和红外光透过率。结果表明:氧气体积分数低于15%时,薄膜为低价钒氧化物,高于20%时薄膜为V2O5;氧气体积分数等于15%时,溅射功率由150W增加到200W,薄膜中钒的价态变低;当溅射功率为250W时,薄膜物相变成VO2。随着沉积时间从30min增加到60min,原子力显微分析显示VO2颗粒尺寸从约200nm增加到400nm;红外光透过率范围从55%～65%减小到45%～55%。VOx thin films were produced on the substrates of glass by reactive magnetron sputtering. The phases, morphology and infrared transmittance were detected by X-my diffractometer, atomic force microscopy and infrared spectrometer, respectively. The results show that, under the oxygen volume fraction φ（O2） of less than 15%, the films are vanadium oxides with low-valences. When φ（O2） is more than 20%, the films are V2O5. With φ（O2） of 15%, the average valence of vanadium becomes lower after the sputtering power increasing from 150 W to 200 W, and the films change to VO2 with the sputtering power of 250 W. While the sputtering time increases from 30min to 60min, the infrared transmittance of the VO2 films decreases from 55%-65% to 45%-55% and the size of grains increases from about 200 nm to 400 nm.

关 键 词：氧化钒 反应磁控溅射 红外透过率 

分 类 号：TG43[金属学及工艺—焊接]