用超高速光电采样技术研究半导体微波器件时域特性和频域特性  

Study of Time Domain and Frequency Domain Characterization of Microwave Semiconductor Devices by Ultrafast Optoelectronic Sampling Technique

作　　者：潘家齐[1] 袁树忠[1] 吕福云 范万德 王劲松 李献元 

机构地区：[1]南开大学电子科学系

出　　处：《Journal of Semiconductors》1998年第2期132-137,共6页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文采用超高速光电采样技术研究了半导体微波器件和单片微波集成电路（ＭＩＭＩＣ）的时域特性和频域特性．阐述了该方法的原理及优越性，对时域波形进行了分析和修正．并利用ＦＦＴ技术将时域波形转换为频域图形，得到半导体微波器件的Ｓ参数．Abstract We use the ultrafast optoelectronic sampling technique to investigate the time domain characterization of microwave and millimeter wave monolithic integrated circuits (MMIC). The principle and the superiority of this technique are elucidated in this paper. The time domain waveform has been analyzed and calibrated. The time domain response to frequency domain transform is performed by the fast Fourier transform (FFT) and S parameters are obtained. The system manufactured by us can measure above 100GHz.

关 键 词：半导体微波器件 微波集成电路 超高速光电采样 

分 类 号：TN385[电子电信—物理电子学] TN454