氦离子注入掺铈铌酸锶钡晶体平面光波导和它的光折变性质  

He^+ Ion Implantation SBN and Ce-Doped SBN Planar Waveguides and Their Photorefractive Properties

作　　者：卢菲[1] 孟鸣岐[2] 王克明[2] 王玉荣[1] 蔡履中[1] 沈定予[3] 王雪梅[3] 

机构地区：[1]山东大学光学系,济南250100 [2]山东大学物理系,济南250100 [3]北京大学技物系重离子物理实验室,北京100871

出　　处：《量子电子学报》1998年第1期47-51,共5页Chinese Journal of Quantum Electronics

基　　金：国家教委博士点基金

摘　　要：室温下用2.8MeV氦离子注入在掺铈铌酸锶钡晶体上形成了平面光波导。用棱镜耦合法观察到了波导的暗模。计算的折射率分布表明在离子注入产生的损伤层中晶体的折射率减小，其中正常折射率减小约3．42％，反常折射率减小为2．55％。由PIPR方法拟合的波导中的折射率分布与TRIM’96给出的注入离子的密度分布基本一致。两波耦合实验表明离子注入可以延长折射率光栅的擦除时间。Planar waveguides are formed by 2.8 MeV He ion implantation on SBN andCe-SBN crystals at room temperature. The waveguide properties are investigated bydark line mode spectroscopy. The profiles of the ordinary and extraordinary refractiveindices are deduced by WKB method. Refractive index decreases in optical barriers withdepth to no= 3.35% and ne= 1.60% for SBN(TE mode),and no= 3.42% andne= 2.55% for Ce-SBN are obtained. The reconstructed profiles according to PIPRmethed closely follow the ion concentration profiles as determined by simulation TRIM'96. The results of two-wave mixing on Ce-SBN show that the photorefractive erasure timeon ion-implantation face is much longer than that on the face without ion implantation.

关 键 词：离子注入 折射率分布 擦除时间 光波导 

分 类 号：TN252.01[电子电信—物理电子学]