半导体CdTe薄膜电化学沉积研究  

An Investigation of the Electrochemical Deposition of CdTe Thin Film

作　　者：樊玉薇[1] 李永祥[1] 吴冲若[1] 

机构地区：[1]东南大学电子工程系

出　　处：《功能材料》1998年第2期180-182,共3页Journal of Functional Materials

基　　金：国家自然科学基金

摘　　要：本文研究半导体ＣｄＴｅ薄膜在ＩＴＯ透明导电玻璃基底上的电化学沉积。分析了电化学沉膜过程以及反应机理，对不同电参数下沉积膜进行了性能表征，研究了温度、沉积电压等参数对膜性能的影响，探讨了制备颗粒细小、均匀性好并具有一定择优取向的ＣｄＴｅ薄膜的方法。The electrochemical deposition of ⅡⅥ group semiconductor CdTe thin film on the ITO conductive glass substrate is stueied in this paper. The process of electrochemical deposition and the mechanism of reaction are investigated. The SEM, XRD and AES analysis methods are used to research the properties of the thin films deposited in different electrochemical parameters, such as the temperature and the voltage. The deposition of CdTe thin films with fine grain, uniform integrant and a certain crystal orientation is studied.

关 键 词：薄膜 沉积参数 膜性能 碲化镉 电化学沉积 

分 类 号：TN304.22[电子电信—物理电子学] TN304.055