掺氮ZnO薄膜的制备及其光电性能  

Preparation of N-doped ZnO Films and its Optical and Electrical Properties

作　　者：沈洪雪[1] 李合琴[1] 方广志[1] 

机构地区：[1]合肥工业大学材料科学与工程学院,合肥230009

出　　处：《理化检验（物理分册）》2009年第1期1-4,19,共5页Physical Testing and Chemical Analysis(Part A:Physical Testing)

基　　金：安徽省红外与低温等离子体重点实验室资助项目(2007C002107D)

摘　　要：在保持氩气流量一定,通过改变O2与N2的流量比,以高纯锌为靶材,通过射频磁控溅射技术在石英玻璃衬底上生长氮掺杂ZnO薄膜。采用XRD、荧光光谱、扫描电镜及皮安表对薄膜的晶体结构、光学性能、表面和截面形貌及电学性能进行了表征。结果表明:氮掺杂ZnO薄膜仍具有高度的c轴择优取向;氮以受主杂质形式存在可有效降低薄膜的电阻率;薄膜中氮含量的相对变化是影响ZnO薄膜晶体质量和光电性质的重要因素。Keeping the ratio of Ar but changing that of O2 ： N2, the N-doped ZnO films were grown on quartz glass substrate by using RF magnetron sputtering with a high-purity Zn target. The crystal structure, optical and electrical properties of the films were characterized by X-ray diffraction, fluorescence spectrometry, SEM and picoammeter/voltage source. The results showed that the N-doped ZnO thin films had a strong c -axis preferential orientation, same as that without N-dopping. As an acceptor impurity, the amount of doped nitrogen effectively reduced the resistivity and influences the crystal structure and properties of the films.

关 键 词：射频磁控溅射 氮掺杂氧化锌薄膜 受主杂质 

分 类 号：TB43[一般工业技术]