Au和Ni掺杂n型硅材料的制备及其热敏特性  

The thermal-sensitive characteristic and mechanism research of deep level impurity Au,Ni compensated n-type silicon material

作　　者：董茂进[1,2] 陈朝阳[1] 范艳伟[1] 丛秀云[1] 王军华[1] 陶明德[1] 

机构地区：[1]中国科学院新疆理化技术研究所,新疆乌鲁木齐830011 [2]中国科学院研究生院,北京100049

出　　处：《功能材料》2009年第1期37-39,共3页Journal of Functional Materials

基　　金：国家高技术研究发展计划(863计划)资助项目(2006AA03Z434)

摘　　要：为了制备高B低阻的硅单晶热敏材料，采用开管涂源的方法，对n型单晶硅进行Au、Ni两种过渡族金属的双重高温掺杂，得到对温度敏感的补偿硅材料，并对其进行测试和分析。掺杂后得到的硅单晶热敏材料，其导电类型仍为n型，且电阻率较低，为欠补偿，测试结果表明其常温电阻率ρ25=64～416Ω·cm，温度敏感系数（B值）在5300K左右；根据半导体中深能级杂质理论推导计算得到的材料的B值，与实验值基本一致。In order to obtain the low resistance and high B-value crystal silicon material,smearing Au and Ni impurities were doped In n-type silicon and were put In openlng environment to heart. The thermal-sensitive silicon material is obtained. The characteristics of the material are measured and analyzed. It is shown that the electrical resistivity of the material is low,and it is still n-type, low compensated, the electrical resistivities are ρ25=64～416Ω·cm under room temperature,the B-values are about 5300K. The B-value calculated by the theory of the semiconductor deep level energy is basically identical with the test value.

关 键 词：双重掺杂 深能级杂质 AU NI 热敏特性 

分 类 号：TN304[电子电信—物理电子学]