氮化硅晶须对反应烧结氮化硅多孔陶瓷介电性能的影响  

Impact of silicon nitride whiskers on the dielectric properties of rcation-bonded porous silicon nitride ceramics

作　　者：胡汉军[1] 周万城[1] 李坊森[1] 罗发[1] 朱冬梅[1] 徐洁[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,陕西西安710072

出　　处：《功能材料》2009年第1期109-111,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(90305016)

摘　　要：以硅粉和氮化硅晶须为原料,通过添加30%(质量分数)成孔剂球形颗粒,以聚乙烯醇作粘结剂,采用干压成型工艺,反应烧结制备了多孔氮化硅陶瓷,分析对比了氮化硅晶须对反应烧结氮化硅多孔陶瓷介电性能的影响。实验结果表明,随着氮化硅晶须加入量的升高,氮化硅多孔陶瓷的介电常数和介电损耗都升高,介电性能恶化。The porous silicon nitride was prepared by reaction-bonded raw silicon powder and silicon nitride whiskers, adding 30wt% pore-forming agent and polyvinyl alcohol. The impacts of silicon nitride whiskers on the properties of reaction-bonded porous silicon nitride ceramics were particular studied. The results showed that the dielectric constant and dielectric loss were all raised with the increase of addition of silicon nitride whiskers. The silicon nitride whiskers deteriorate the dielectric properties of porous silicon nitride ceramics.

关 键 词：多孔氮化硅 氮化硅晶须 成孔剂 介电 

分 类 号：TQ174[化学工程—陶瓷工业]