大动态范围CMOS图像传感器像素单元的设计  

Design of Pixel Cell for High Dynamic Range CMOS Image Sensor

作　　者：高静[1] 姚素英[1] 徐江涛[1] 孙烨辉[2] 史再峰[1] 曲鹏[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072 [2]IDT科技有限公司,上海200233

出　　处：《南开大学学报（自然科学版）》2008年第6期62-66,共5页Acta Scientiarum Naturalium Universitatis Nankaiensis

基　　金：国家自然科学基金(60576025)

摘　　要：设计了CMOS图像传感器的像素单元,通过将光电二极管的光电压与参考电压比较,产生控制信号来调节积分时间,可实现随光强自动调节的光电响应,在低照度下实现线性光电响应,高照度下实现对数光电响应.其中参考电压由存储于RAM中的数据通过DAC读出产生.该像素单元采用Chartered 0.35μm工艺设计,仿真结果表明该像素结构可使CMOS图像传感器的动态范围达到126 dB.A novel pixel cell of CMOS image sensor is proposed in the paper. The integration time of the pixel is controlled by the output of the comparator which compares the photovoltage and reference. The auto-adjusting photoelectric response is described in the design which realizes line response in low luminaries and logarithm response in high luminaries. The reference voltage is readout by DAC through RAM which stores the data. The pixel is designed base on Chartered＇s 0. 35 μm CMOS technology, and the simulation results indicate that the dynamic range is achieved over 126 dB.

关 键 词：像素 积分时间 光电响应 动态范围 

分 类 号：TN492[电子电信—微电子学与固体电子学]