氮化镓薄膜生长工艺研究的最新进展  

Developments of Epitaxial Growth of Gallium Nitride Thin Films

作　　者：赵谢群[1,2] 张燕红[1,2] 邱向东[1,2] 孙晋伟[1,2] 

机构地区：[1]北京有色金属研究总院 [2]北京科技大学

出　　处：《稀有金属》1998年第2期138-142,共5页Chinese Journal of Rare Metals

摘　　要：综述了高质量ＧａＮ薄膜材料生长工艺的最新进展，着重阐明金属有机物汽相沉积工艺以及以活性氮为前体的分子束外延工艺的应用。The developments of high qulity GaN epilayer growth of the past year were reviewed, including MOCVD, MBE, VPE and doping processes. New substract materials and various buffer layers were utilized to solve the problem of lattice mismatch between substract and epilayer. Many growth techniques which use activated nitrogen source were employed to decrease the growth temperature and increase the growth rate. In addition, the selection of new type gallium precursors and novel doping sources were shown in this paper respectively.

关 键 词：薄膜 外延生长 活化氮源 氮化镓 

分 类 号：TN304.23[电子电信—物理电子学]