前驱膜Al含量对铜铟铝硒薄膜成分和结构的影响  

INFLUENCE OF Al CONCENTRATION IN PRECURSOR ON COMPOSITION AND STRUCTURE OF Cu(InAl)Se_2 ABSORBER

作　　者：向华[1] 庄大明[1] 张弓[1] 李春雷[1] 

机构地区：[1]清华大学机械工程系,北京100084

出　　处：《太阳能学报》2009年第1期94-96,共3页Acta Energiae Solaris Sinica

基　　金：国家高新技术发展(863)计划(2004AA513023)

摘　　要：采用中频交流磁控溅射方法制备了CIA前驱膜,并采用固态硒化法进行处理,获得了CIAS吸收层薄膜。采用SEM和XRD观察和分析了薄膜的成分、组织结构和表面形貌。着重分析了CIA前驱膜中的Al含量对CIAS吸收层薄膜成分、晶体结构的影响。结果表明,通过调节CIA前驱膜的Al含量可制备得到Cu/(In+Al)原子比接近1,且Al/(In+Al)比例可调的成分分布均匀的CIAS薄膜。CIAS薄膜由Cu(In_(1-x),Al_x)Se_2固溶体相组成,Al主要是以替代In的固溶形式存在。CuInAl （CIA） fihns as precursors for CIAS were prepared using middle frequency magnetmn sputtering and CIAS absorbers were obtained by selenization. SEM and XRD were used to observe and analyse the compositions, microstructures, and surface morphologies of the films. The influences of M concentration in precursors on compositions, micmstructures of CIAS absorbers were analyzed. The results showed that the CIAS absorber films with a Cu/（In ＋ M） atomic ratio of approaching 1 and an adjustable Al/（In ＋ Al） ratio and with uniform element distribution could be obtained by adjusting Al concentration in CIA precursors. CIAS obtained in the work is composed of Cu （ In1-x Mx ） Sea phase. M exists mainly in solid solution by substituting In.

关 键 词：太阳电池 CIAS 磁控溅射 前驱膜 硒化 

分 类 号：TM615[电气工程—电力系统及自动化]