谐振隧穿晶体管数字单片集成电路  

Digital Monolithic Integrated Circuits Based on RTTs

作　　者：李效白[1] 

机构地区：[1]专用集成电路国家重点实验室,石家庄050051

出　　处：《微纳电子技术》2009年第1期1-9,共9页Micronanoelectronic Technology

摘　　要：阐述了谐振隧穿器件构成的与非门、单/双稳逻辑转换电路、或非门、流水线逻辑门、D触发器、静态存储器、多值逻辑和静态分频器等数字单片集成电路,它们具有高频高速、低功耗、多值逻辑、节点少、节省器件、简化电路等显著优势,将是数字集成电路后续小型化最有希望的代表。指出材料生长和芯片工艺制作等问题是其实现工业化生产的瓶颈。综述了国内外在该领域的研究现状和发展趋势,特别是美国已经有高水平的谐振隧穿晶体管数字单片电路问世,我国正在开展少量的研究工作。The digital monolithic integrated circuits are described, such as NAND gate, NOR gate, pipelined logic gate, D flip-flop （D-FF）, static random access memory （SRAM）, monostable-bistable transition logic element （MOBILE）, multiple-valued logic （MVL） circuit and static fequency divider. They have remarkable advantages in ultra-frequency, ultra-speed, low power consumption, multiple-valued logic, a few of circuit interconnects and devices, simple circuit. They are promising representative of aftertime miniaturization for ultra-high-speed IC. However, some choke points in material growth and chip technology are bottleneck for realizing industrial production. The development status and trend of monolithic digital integrated circuits with resonant tunnelling transistors are summarized. The state-of-the-art monolithic digital integrated circuit based on RTTs has already come out in the USA. A little of research is being done in the field in China.

关 键 词：谐振隧穿晶体管 D触发器 静态存储器 多值逻辑 单稳双稳转换电路 集成电路 

分 类 号：TN312.2[电子电信—物理电子学] TN32