Ⅱ-Ⅵ族稀磁半导体Cd_(1-x)Mn_xTe/Cd_(1-y)Mn_yTe超晶格的光调制反射谱的研究  

STUDY OF PHOTOREFLECTANCE IN Cd 1-x Mn xTe/Cd 1-y Mn yTe SUPERLATTICES OF Ⅱ Ⅵ DILUTED MAGNETIC SEMICONDUCTORS

作　　者：李海涛[1,2] 李晓莅[1,2] 陈唏 刘继周[1,2] 陈辰嘉 王学忠[1,3] 韩一龙 林春[1,3] 凌震 王迅[1,3] 

机构地区：[1]北京大学物理系 [2]中国科学院激发态物理开放实验室 [3]复旦大学应用表面物理实验室

出　　处：《光谱学与光谱分析》1998年第2期129-134,共6页Spectroscopy and Spectral Analysis

基　　金：国家自然科学基金

摘　　要：本文报道用分子束外延（ＭＢＥ）技术生长的Ｃｄ１－ｘＭｎｘＴｅ／Ｃｄ１－ｙＭｎｙＴｅ超晶格样品在８０Ｋ下的光调制反射谱实验结果。观测到１１Ｈ、２２Ｈ、３３Ｈ和１１Ｌ等激子跃迁结构。计及晶格失配导致的应力效应，对子能级结构进行了理论计算。实验结果与理论计算符合较好。The observation of photoreflectance spectra of  Cd 1-x Mn x Te/Cd 1-y Mn y Te  superlattices was carried out at temperature T=80 K .The samples were grown by molecular beam epitaxy(MBE)technique.The heavy and light hole excitonic transition structures 11H,22H,33H and 11L were observed and the theoretical calculations ,including the strain effects,were performed.By comparison,both agree well.

关 键 词：稀磁半导体 超晶格 光调制反射谱 MBE DMS 

分 类 号：TN304.2[电子电信—物理电子学] O649.3[理学—物理化学]