基于深亚微米CMOS工艺输出单元电路研究  

Output Cell based on submicron CMOS Technology

作　　者：王明国[1] 张为[1] 杨宇[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《核电子学与探测技术》2008年第6期1215-1218,共4页Nuclear Electronics & Detection Technology

基　　金：国家自然科学基金资助项目(60576025);天津市应用基础及前沿技术研究计划重点项目(07JCZDJC06200)

摘　　要：详细分析了一种基于深亚微米CMOS工艺输出单元电路结构,并对其三个基本模块:输出驱动、电源噪声抑制和ESD保护进行了深入研究。综合考虑速度、功耗和芯片面积等因素,输出驱动采用两级反相器结构,同时根据短沟道理论,提出了确定器件尺寸的方法;对于电源噪声抑制和ESD保护电路,重点探讨了其工作原理和具体实现方法。Spectre仿真结果表明,输出单元电路能够显著抑制SSO噪声。该电路已成功应用于所研制的CMOS图像传感器中。The structure of an output cell circuit based on submicron CMOS technology is discussed in this paper, and three main parts： the output buffer, SSO noise suppression and ESD protection, are studied in details, respectively. For output buffer module, according to requirements on speed, power and area, two-stage inverter is used and sizes of MOSFETs are determined artificially based on short channel theory. For noise suppression module and ESD protection module, mechanisms are analyzed thoroughly. Simulation with Spectra shows that the output cell can suppress SSO noise significantly. It has been success-fully used in CMOS image sensors we developed.

关 键 词：I/O单元 输出驱动 SS0噪声抑制 ESD保护电路 

分 类 号：TN495[电子电信—微电子学与固体电子学]