非线性补偿的低温漂低功耗CMOS带隙基准源的设计  

Design of Low Temperature Drift and Low Power Consumption CMOS Bandgap Reference with Nonlinear Compensation

作　　者：吴志明[1] 杨鹏[1] 吕坚[1] 蒋亚东[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《电子科技大学学报》2009年第1期137-140,共4页Journal of University of Electronic Science and Technology of China

基　　金：国家杰出青年基金(60425101);教育部新世纪优秀人才计划(NCET-04-0896)

摘　　要：设计了一种基于电流模式的具有非线性补偿的低温漂低功耗带隙基准电压源,在传统电路的基础上增加一个三极管和两个电阻达到对双极型晶体管的发射结电压VBE中与温度相关的非线性项的补偿。电路采用CSMC0.5μmDPTMCMOS工艺制造。该电路结构简单,在室温下的输出电压为1.217V,在?40℃～125℃的范围内温度系数为4.6ppm/℃,在2.6～4V之间的电源调整率为1.6mV/V。在3.3V的电源电压下整个电路的功耗仅为0.21mW。A nonlinear compensated bandgap reference based on current-mode is designed, The reference exhibits low temperature drift and low power consumption. The temperature-related nonlinear item in the VBF of a bipolar transistor can be compensated by adding a bipolar transistor and two resistors to conventional circuit. Implemented in CSMC 0.5 μm double poly triple metal CMOS technology, the proposed bandgap reference delivers an output voltage of 1.217 V with 3.3 V supply at 27℃. A temperature coefficient of 4.6 ppm/℃ from -40℃ to 125℃ and a line regulation of 1.6 mV/V from 2.6 V to 4 V are achieved after trimming. The power dissipation of the circuit is just 0.21 mW with 3.3 V supply.

关 键 词：带隙基准源 CMOS 低功耗 低温漂 非线性补偿 

分 类 号：TN432[电子电信—微电子学与固体电子学]